III-Nitride Based Light Emitting Diodes and Applications

  • Tae-Yeon Seong
  • Jung Han
  • Hiroshi Amano
  • Hadis Morkoç

Part of the Topics in Applied Physics book series (TAP, volume 133)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Jeff Y. Tsao, Jonathan J. Wierer Jr., Lauren E.S. Rohwer, Michael E. Coltrin, Mary H. Crawford, Jerry A. Simmons et al.
    Pages 11-28
  3. Takashi Egawa, Osamu Oda
    Pages 29-67
  4. Michael Kneissl, Jens Raß, Lukas Schade, Ulrich T. Schwarz
    Pages 93-128
  5. Elison Matioli, Claude Weisbuch
    Pages 129-161
  6. Jong-In Shim
    Pages 163-207
  7. S. Rajan, T. Takeuchi
    Pages 209-238
  8. Jongil Hwang, Rei Hashimoto, Shinji Saito
    Pages 239-266
  9. Hideki Hirayama, Norihiko Kamata, Kenji Tsubaki
    Pages 267-299
  10. C. Lalau Keraly, L. Kuritzky, M. Cochet, Claude Weisbuch
    Pages 301-340
  11. Ja-Yeon Kim, Tak Jeong, Sang Hern Lee, Hwa Sub Oh, Hyung Jo Park, Sang-Mook Kim et al.
    Pages 341-361
  12. M. Meneghini, G. Meneghesso, E. Zanoni
    Pages 363-395
  13. Rong-Jun Xie, Naoto Hirosaki
    Pages 397-432
  14. Wen-Yung Yeh, Hsi-Hsuan Yen, Kuang-Yu Tai, Pei-Ting Chou
    Pages 433-455
  15. Yoshi Ohno
    Pages 457-480
  16. Robert F. Karlicek Jr.
    Pages 481-492
  17. Back Matter
    Pages 493-495

About this book


The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs.

Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission.

However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies.

Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.


High Voltage LEDs III-Nitride Based Semiconductors Laser Diodes Quantum efficiency Solid State Lighting heteroepitaxial GaN Tunnel Junction LEDs Green/Yellow LEDs UV LEDs Heteroepitaxial GaN on Si Substrates Internal Quantum Efficiency High Voltage LEDs LEDs review

Editors and affiliations

  • Tae-Yeon Seong
    • 1
  • Jung Han
    • 2
  • Hiroshi Amano
    • 3
  • Hadis Morkoç
    • 4
  1. 1.Department of Materials Science and EngineeringKorea UniversitySeoulKorea (Republic of)
  2. 2.Department of Electrical EngineeringYale UniversityNew HavenUSA
  3. 3.Department of Electrical Engineering and Computer ScienceNagoya UniversityNagoyaJapan
  4. 4.Department of Electrical and Computer EngineeringVirginia Commonwealth UniversityRichmondUSA

Bibliographic information