Experimental Process Characterization for MOS Statistical Model
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In general, to tune a statistical model to a given process, a characterization procedure must be performed to determine the statistical properties of that process. For some statistical models, this entails use of experimental design  and response surface methodologies [2–4] to map measurable process parameters to model parameters. However, for the SMOS model, described in Chapter 3, tuning the statistical model to a fabrication process is accomplished through measurement of model fitting parameters from specific test structures. The experimental determination of the model fitting constants serves two purposes. First, it verifies that MOS transistor mismatch does exhibit the dependencies on device size and separation distance predicted by the parameter mismatch model. Second, determination of the model fitting constants enables simulation of more complex circuits once the model is incorporated into a circuit simulation environment. The implementation of the SMOS model into a simulation environment will be described in Chapter 5.
KeywordsDevice Size Test Chip Parameter Mismatch Area Dependence Transistor Pair
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