Experimental Process Characterization for MOS Statistical Model

  • Christopher Michael
  • Mohammed Ismail
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 211)


In general, to tune a statistical model to a given process, a characterization procedure must be performed to determine the statistical properties of that process. For some statistical models, this entails use of experimental design [1] and response surface methodologies [2–4] to map measurable process parameters to model parameters. However, for the SMOS model, described in Chapter 3, tuning the statistical model to a fabrication process is accomplished through measurement of model fitting parameters from specific test structures. The experimental determination of the model fitting constants serves two purposes. First, it verifies that MOS transistor mismatch does exhibit the dependencies on device size and separation distance predicted by the parameter mismatch model. Second, determination of the model fitting constants enables simulation of more complex circuits once the model is incorporated into a circuit simulation environment. The implementation of the SMOS model into a simulation environment will be described in Chapter 5.


Device Size Test Chip Parameter Mismatch Area Dependence Transistor Pair 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Christopher Michael
    • 1
  • Mohammed Ismail
    • 2
  1. 1.National SemiconductorUSA
  2. 2.Ohio State UniversityUSA

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