CAD Implementation of the SMOS Model

  • Christopher Michael
  • Mohammed Ismail
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 211)


An important feature of the SMOS model presented in Chapter 3 is its ability to calculate transistor model decks independent of knowledge about the circuit structure. Previous statistical modeling endeavors required an equation relating the circuit output variance to the individual parameter variances for each device to apply their model to a given circuit. These equations are extremely difficult to determine for circuits containing more than two or three transistors, making this scheme inapplicable to a majority of analog circuits. While previous statistical circuit simulation endeavors did not require these circuit output equations, they ignored such important transistor mismatch dependencies as device size and layout. Instead, the variance for each device, independent of size or location, was explained by a single number.


Circuit Simulation Current Mirror Model File Test Chip Coordinate Method 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Christopher Michael
    • 1
  • Mohammed Ismail
    • 2
  1. 1.National SemiconductorUSA
  2. 2.Ohio State UniversityUSA

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