Statistical CAD of Analog MOS Circuits

  • Christopher Michael
  • Mohammed Ismail
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 211)


The strength of circuit simulations based on the SMOS model developed in Chapter 3 is their ability to determine the variance of a given circuit performance without prior knowledge concerning the dependence of the circuit output on the individual device parameters. This dependence is preserved by the circuit simulator much the same way the effect of transistor bias on performance uncertainty is maintained. However, while statistical simulation is able to determine the effect of device variability on circuit performance, it yields little information concerning which device characteristic contributes to the performance variance. Through simple statistical analyses of basic analog circuit building blocks, useful information concerning the origin of circuit output variances can be deduced. In addition, these analyses can discern the relative importance of parameter variance and transistor bias on the circuit performance variance.


Circuit Performance Current Mirror Differential Pair Circuit Yield Circuit Optimization 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Christopher Michael
    • 1
  • Mohammed Ismail
    • 2
  1. 1.National SemiconductorUSA
  2. 2.Ohio State UniversityUSA

Personalised recommendations