II-VI/III-V Heterointerfaces: Epilayer-On-Epilayer Structures
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The integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under way to examine the epitaxial growth and material properties of a variety of both II–VI and III–V compounds grown on a substrate where the II–VI/III–V heterostructure can be utilized. This paper describes some recent developments involving the molecular beam epitaxial (MBE) growth and characterization of two important II–VI/III–V heterostructures: ZnSe/GaAs and InSb/CdTe; a comparison is made between epitaxial layer/substrate interfaces and epilayer/epilayer interfaces for both heterostructures. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The InSb/CdTe heterointerface possesses an even closer lattice match, ~0.05% (comparable to the (Al,Ga)As/GaAs material system), and is motivated by possible device applications provided by InSb/CdTe quantum wells.
KeywordsReflection High Energy Electron Diffraction Interface State Density Defense Advance Research Project Agency Defense Advance Research Project Agency Molecular Beam Epitaxial
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- 4.L. A. Kolodziejski, R. L. Gunshor, A. V. Nurmikko, and N. Otsuka, RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2D Magnetic Semiconductors, in: “Thin-Film Growth Techniques for Low Dimensional Structures,” R. F. C Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, and A. S. Arrott, eds., Plenum Publishing, New York (1987).Google Scholar
- 5.R. L. Gunshor and L. A. Kolodziejski, IEEE J. Quantum Electronics. Special Issue on Quantum Well Heterostructures and Superlattices, in press, (1988).Google Scholar
- 9.G. D. Studtmann, R. L. Gunshor, L. A. Kolodziejski, M. R. Melloch, N. Otsuka, D. P. Munich, J. A. Cooper Jr., and R. F. Pierret, paper presented at the 45th Device Research Conference, Santa Barbara, CA, June 22–24, 1987.Google Scholar
- 10.Q. Qian, J. Qiu, M. R. Melloch, J. A. Cooper, R. L. Gunshor, and L. A. Kolodziejski, Appl. Phys. Lett., to be published.Google Scholar
- 20.G. M. Williams, C. R. Whitehouse, N. G. Chew, G. W. Blackmore, and A. G. Cullis, J. Vac. Sci. Technol. B3:704 (1985).Google Scholar
- 22.T. D. Golding, M. Martinka, and J. H. Dinan, J. Appl. Phys. 15 August issue (1988).Google Scholar
- 24.D. R. T. Zahn, T. D. Golding, K. J. Mackey, J. Geurts, J. H. Dinan, W. Richter, and R. H. Williams, J. Appl. Phys.. in press.Google Scholar
- 25.G. M. Williams, C R. Whitehouse, T. Martin, N. G. Chew, A. G. Cullis, T. Ashley, D. E. Sykes, and K. Mackey, paper presented at the 4th International Conference on Molecular Beam Epitaxy, York, England, September 7–10, 1986.Google Scholar
- 26.The Sb cracker was obtained from EPI, Effusion Products, Incorporated.Google Scholar