Growth of II-VI/III-V Mixed Heterostructures
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In this paper we describe results on the growth of ZnSe/GaAs heteroepitaxial structures using a dual chamber molecular beam epitaxy (MBE) system. We have observed a preference for ZnSe to grow on the GaAs (2x4) As rich surface. In addition, we observe one dimensional disorder in the initial nucleation of GaAs when grown on ZnSe layers. We attribute these two behaviors to the existance of an electronic imbalance at the II–VI/III–V interface which can be minimized by tailoring of the surface stoichiometry. We have also obtained extremely narrow photoluminescence linewidths for layers of ZnSe grown on thin buffer layers of GaAs, AlAs and Inx Ga1-x As. We attribute this to the elimination of inhomogeneous strain associated with partial lattice relaxation.
KeywordsBuffer Layer Reflection High Energy Electron Diffraction Reflection High Energy Electron Diffraction Pattern Molecular Beam Epitaxial ZnSe Layer
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- 3.H. H. Farrell, M. C. Tamargo and J. L. de Miguel, presented at the Physics and Chemistry of Surfaces and Interfaces Meeting, January, 1988.Google Scholar
- 6.T. Yao, in The Technology and Physics of Molecular Beam Epitaxy, edited by E. H. C. Parker (Plenum, New York, 1986) p. 313.Google Scholar
- 7.B. J. Skromme, M. C. Tamargo, J. L. de Miguel and R. E. Nahory, presented at the Electronic Materials Conference, June, 1988.Google Scholar
- 11.K. Mazuruk, M. Benzaquen and D. Walsh, J. Physique 48 (1987) C5–357.Google Scholar