Exciton Self-Trapping in ZnSe/ZnTe Superlattice Structures

  • L. A. Kolodziejski
  • R. L. Gunshor
  • A. V. Nurmikko
  • N. Otsuka
Part of the NATO ASI Series book series (NSSB, volume 200)


The growth by molecular beam epitaxy (MBE) and the optical and structural characterization of a variety of wide bandgap II–VI compound semiconductors have attracted much attention in the last few years; a review of these new II–VI compound semiconductor superlattices can be found in reference 1. Multiple quantum well and superlattice structures incorporating layers of the diluted magnetic (or semimagnetic) semiconductors (DMS) provide bandgap modulation while exhibiting novel phenomenon arising from the presence of the magnetic ion. Subtlties arising from the exchange interaction between the magnetic ions and band electrons in an external magnetic field provide additional insight into the spatial distribution of carrier wavefunctions in structures of atomic dimensions. In one example, this novel diagnostic tool allows determination of valence band offset in the II–VI DMS strained-layer superlattice structures.


Molecular Beam Epitaxy Mixed Crystal Multiple Quantum Reflection High Energy Electron Diffraction Zeeman Splitting 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • L. A. Kolodziejski
    • 1
  • R. L. Gunshor
    • 1
  • A. V. Nurmikko
    • 2
  • N. Otsuka
    • 3
  1. 1.School of Electrical EngineeringPurdue UniversityWest LafayetteUSA
  2. 2.Division of Engineering and Department of PhysicsBrown UniversityProvidenceUSA
  3. 3.Materials EngineeringPurdue UniversityWest LafayetteUSA

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