Acoustoelectric Characterization of Wide Gap II-VI Semiconductors in the Case of Bipolar Photoconduction

  • Josef Rosenzweig
Part of the NATO ASI Series book series (NSSB, volume 200)


The purpose of the present article is to demonstrate that acousto-electric methods may be used to characterize piezoelectric semiconductors in the case of bipolar photoconduction. The wide gap II–VI semiconductor CdTe is used as an example for this characterization method.


Generation Rate Sound Wave Hall Effect Applied Electric Field Inversion Point 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Josef Rosenzweig
    • 1
  1. 1.Institut für angewandte PhysikUniversität KarlsruheKarlsruheFed. Rep. of Germany

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