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Metal–Semiconductor Junctions and Semiconductor Heterostructures

  • Hans Lüth
Chapter
  • 4.1k Downloads
Part of the Graduate Texts in Physics book series (GTP)

Abstract

General principles governing the electronic structure of solid-solid interfaces are explained. In this context metal-induced gap states (MIGS) and virtual induced gap states (VIGS) are introduced. The electronic structure of metal-semiconductor junctions and of semiconductor heterointerfaces are discussed in detail. As applications the Schottky barrier, modulation doping and high mobility two-dimensional electron gases (2DEG) as well as the high electron mobility transistor (HEMT) are presented. In connection with 2DEGs at semiconductor interfaces quantum effects such as Shubnikov–de Haas oscillations and the quantum Hall effect are treated.

Keywords

Fermi Level Interface State Schottky Barrier High Electron Mobility Transistor Edge Channel 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Supplementary material

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Copyright information

© Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  • Hans Lüth
    • 1
    • 2
  1. 1.Forschungszentrum Jülich GmbHPeter Grünberg Institut (PGI) PGI-9: Semiconductor NanoelectronicsJülichGermany
  2. 2.Jülich Aachen Research Alliance (JARA)AachenGermany

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