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Interactions and Kinetics

  • Ian W. Boyd
Chapter
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Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 3)

Abstract

Most of the theoretical detail contained in this monograph is confined to this chapter. Here is discussed the interaction of electromagnetic radiation, from the ultraviolet through the visible to the near infrared, with matter. The treatment of laser excitation of gases and solids through vibrational and electronic transitions, and the subsequent energy transfer or bonding modifications, is from an elementary level. Particular attention is given to the special properties of surfaces; the mechanisms of adsorption, desorption, and nucleation, so important in this area, are discussed. A more practical review of some useful modelling work in the areas of laser induced heating and the various reaction modes and film growth rates induced by lasers is also presented.

Keywords

Laser Beam Laser Radiation Free Carrier Vibrational State Diatomic Molecule 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 2.1
    M. Snells, E. Borselia, R. Fantoni, A. Giardini-Guidoni: In Laser Processing and Diagnostics, ed. by D. Bäuerle, Springer Ser. Chem. Phys., Vol.39 (Springer, Berlin, Heidelberg 1984) and references therein.Google Scholar
  2. 2.2
    M. Bass, J.R. Franchi, J. Chem. Phys. 64, 4417 (1976)ADSCrossRefGoogle Scholar
  3. 2.3
    T.J. Chuang: J. Vac. Sci. Technol. 21, 798 (1982)ADSCrossRefGoogle Scholar
  4. 2.4
    J.I Steinfeld, T.G. Anderson, C. Reiser, D.R. Denison, L.D. Hartsough, J.R. Hollahan: J. Electrochem. Soc. 127, 514 (1980)CrossRefGoogle Scholar
  5. 2.5
    T.J. Chuang: J. Chem. Phys. 74, 1453 (1981)ADSCrossRefGoogle Scholar
  6. 2.6
    F.A. Houle, T.F. Chuang: J. Vac. Sci. Technol. 20, 790 (1982)ADSCrossRefGoogle Scholar
  7. 2.7
    T.J. Chuang: IBM J. Res. Dev. 26, 145 (1982)CrossRefGoogle Scholar
  8. 2.8
    R. Solanki, W.H. Ritchie, G.J. Collins: Appl. Phys. Lett. 43, 454 (1983)ADSCrossRefGoogle Scholar
  9. 2.9
    G.L. Loper, M. Tabat: SPIE 459, 121 (1984)Google Scholar
  10. 2.10
    G. E. Jellison Jr, F.A. Modine: Appl. Phys. Lett. 41, 180 (1982)ADSCrossRefGoogle Scholar
  11. G. E. Jellison Jr, F.A. Modine: Phys. Rev. B27, 7466 (1983)ADSGoogle Scholar
  12. 2.11
    J.E. Jellison: In [Ref.2.87, p.95]Google Scholar
  13. 2.12
    N. Bloembergen: IEEE J. QE-10, 375 (1974)CrossRefGoogle Scholar
  14. 2.13
    J.A. McKay, J.T. Schriemf: IEEE J. QE-10, 2008 (1981)CrossRefGoogle Scholar
  15. 2.14
    R.F. Marks, R.A. Poliak, Ph. Avouris, C.T. Lin, Y.J. Thefaine: J. Chem. Phys. 78, 4270 (1983) and references therein.ADSCrossRefGoogle Scholar
  16. 2.15
    R.F. Marks, R.A. Pollack, Ph. Avouris: In Laser Diagnostics and Photochemical Processing for Semiconductor Devices, ed. by R.M. Osgood, S.R.J. Brueck, H.R. Schlossberg (North-Holland, Amsterdam 1983) p.257Google Scholar
  17. 2.16
    F.A. Houle, T.F. Deutsch, R.M. Osgood (eds.): Laser Chemical Processing of Semiconductor Devices, Extended abstracts of MRS Symp.B (Materials Research Society, Pittsburgh 1984)Google Scholar
  18. 2.17
    J. Heidberg, H. Stein, E. Riehl: Phys. Rev. Lett. 49, 666 (1982)ADSCrossRefGoogle Scholar
  19. 2.18
    T.J. Chuang: J. Chem. Phys. 76, 3828 (1982)ADSCrossRefGoogle Scholar
  20. 2.19
    T.J. Chuang, H. Seki: Phys. Rev. Lett. 49, 382 (1982)ADSCrossRefGoogle Scholar
  21. 2.20
    R.S. Lichtman, D. Shapira: CRC Crit. Rev. Solid State Mat. Sci. 8, 93 (1978)ADSCrossRefGoogle Scholar
  22. 2.21
    N.H. Tolk, M.M. Traum, J.C. Tully, T.E. Madey (eds): Desorption Induced by Electronic Transitions DIET I, Springer Ser. Chem. Phys. Vol.24 (Springer, Berlin, Heidelberg 1983)Google Scholar
  23. 2.22
    W. Brenig, D. Menzel (eds.): Desorption Induced by Electronic Transitions DIET II, Springer Ser. Surf. Sci., Vol.4 (Springer, Berlin, Heidelberg 1985)Google Scholar
  24. 2.22
    D. Menzel: J. Vac. Sci. Technol. 20, 538 (1982)ADSCrossRefGoogle Scholar
  25. 2.23
    V.S. Antonov, V.S. Letokhov, A.N. Shibanov: Appl. Phys. 25, 71 (1971)ADSCrossRefGoogle Scholar
  26. 2.24
    D.E. Ramaker: In [2.21]Google Scholar
  27. 2.25
    B. Schafer, P. Hess: Appl. Phys. B37, 197 (1985)ADSGoogle Scholar
  28. 2.26
    D. Menzel, R. Gomer: J. Chem. Phys. 41, 3311 (1964)ADSCrossRefGoogle Scholar
  29. 2.27
    P.A. Redhead: Can. J. Phys. 42, 886 (1984)ADSCrossRefGoogle Scholar
  30. 2.28
    M.S. Slutsky, T.F. George: J. Chem. Phys. 70, 1231 (1979)ADSCrossRefGoogle Scholar
  31. 2.29
    M.S. Dzhidzhoev, A.I. Osipor, V.Ya. Panchenko, V.T. Platonenko, R.V. Khokhlow, K.V. Shaitan: Sov. Phys. JETP 47, 684 (1978)ADSGoogle Scholar
  32. 2.30
    P.R. Antoniewicz: Phys. Rev. B21, 3811 (1980)ADSGoogle Scholar
  33. 2.31
    S. Baidyaroy, W.R. Bottoms, P. Mark: Surf. Sci. 28, 517 (1971)ADSCrossRefGoogle Scholar
  34. 2.32
    Y. Shapira, S.M. Cox, D. Lichtman: Surf. Sci. 54, 43 (1976)ADSCrossRefGoogle Scholar
  35. 2.33
    N. Van Hieu, D. Lichtman: Surf. Sci. 103, 535 (1981)CrossRefGoogle Scholar
  36. 2.34
    N. Van Hieu, D. Lichtman: J. Vac. Sci. Technol. 18, 49 (1981)ADSCrossRefGoogle Scholar
  37. 2.35
    T. Kawai, T. Sakata: Chem. Phys. Lett. 69, 33 (1981)ADSCrossRefGoogle Scholar
  38. 2.36
    T.J. Chuang, J. Vac. Sci. Technol., B3, 1408 (1985)Google Scholar
  39. 2.37
    T.J. Chuang, H. Seki, I. Hussla: Surf. Sci. 158, 525 (1985)ADSCrossRefGoogle Scholar
  40. 2.38
    S.H. Brunauer, P.H. Emmett, E. Teller: J. Am. Chem. Soc. 60, 309 (1938)ADSCrossRefGoogle Scholar
  41. 2.39
    C.J. Chen, R.M. Osgood: Appl. Phys. A31, 171 (1983)ADSGoogle Scholar
  42. 2.40
    D.J. Ehrlich, R.M. Osgood: Chem. Phys. Lett. 79, 381 (1981)ADSCrossRefGoogle Scholar
  43. 2.41
    C.R. Brundle, H. Hopster: J. Vac. Sci. Technol. 18, 663 (1981)ADSCrossRefGoogle Scholar
  44. 2.42
    F. Bartels, W. Mönch: Surf. Sci. 143, 315 (1984)ADSCrossRefGoogle Scholar
  45. 2.43
    D.J. Ehrlich, J.Y. Tsao: J. Vac. Sci. Technol. Bl, 969 (1983)Google Scholar
  46. 2.44
    D.J. Ehrlich, J.Y. Tsao: Appl. Phys. Lett. 46, 198 (1985)ADSCrossRefGoogle Scholar
  47. 2.45
    W.Brown: In Laser and Electron Beam Solid Interactions and Material Processing, ed. by J.F. Gibbons, L.D. Hess, T.W. Sigmon (North Holland, Amsterdam 1981) p.20Google Scholar
  48. 2.46
    E.J. Yoffa: Phys. Rev. B26, 2415 (1981)Google Scholar
  49. 2.47
    N. Bloembergen: In Laser-Solid Interactions and Laser Processing, ed. by S.D. Ferris, H.J. Leamy, J.M. Poate (AIP, New York 1979) p.1Google Scholar
  50. 2.48
    H.S. Carslaw, J.C. Jaeger: Conduction of Heat in Solids (Clarendon, Oxford 1959)Google Scholar
  51. 2.49
    M. Lax: J. Appl. Phys. 48, 3919 (1977)ADSCrossRefGoogle Scholar
  52. 2.50
    Y.I. Nissim, A. Lietoila, R.B. Gold, J.F. Gibbons: J. Appl. Phys. 51, 274 (1980)ADSCrossRefGoogle Scholar
  53. 2.51
    J.E. Moody, R.H. Hendel: J. Appl. Phys. 53, 4364 (1982)ADSCrossRefGoogle Scholar
  54. 2.52
    F. Ferrieu, G. Auvert: J. Appl. Phys. 54, 2646 (1983)ADSCrossRefGoogle Scholar
  55. 2.53
    P. Schvan, R.E. Thomas: J. Appl. Phys. 57, 4378 (1985)CrossRefGoogle Scholar
  56. 2.54
    C.Y. Ho, R.W. Powell, P.E. Lilley: J. Phys. Chem. Ref. Data Suppl. 3, I-588 (1974)Google Scholar
  57. 2.55
    P.D. Maycock: Solid State Electron. 10, 161 (1967)ADSCrossRefGoogle Scholar
  58. 2.56
    E.g. see W.B. Joyce: Solid State Electron. 18, 321 (1975)ADSCrossRefGoogle Scholar
  59. 2.57
    H.W. Lo, A. Compaan: J. Appl. Phys. 51, 1565 (1980)ADSCrossRefGoogle Scholar
  60. 2.58
    I.W. Boyd: Appl. Phys. Lett. 42, 728 (1983)ADSCrossRefGoogle Scholar
  61. 2.59
    I.W. Boyd, T.D. Binnie, J.I.B. Wilson, M.J. Colles: J. Appl. Phys. 55, 3061 (1984)ADSCrossRefGoogle Scholar
  62. 2.60
    A.E. Bell: RCA Rev. 40, 295 (1979)ADSGoogle Scholar
  63. 2.61
    P. Baerl, S.U. Campisano, G. Foti, E. Rimini: J. Appl. Phys. 50, 788 (1979)ADSCrossRefGoogle Scholar
  64. 2.62
    J.R. Meyer, M.R. Kruer, F.J. Bartoli: J. Appl. Phys. 51, 5513 (1980)ADSCrossRefGoogle Scholar
  65. 2.63
    M. Bertolotti, C. Sibilia: IEEE J. QE-17, 1980 (1981)CrossRefGoogle Scholar
  66. 2.64
    R.F. Wood: Phys. Rev. B25, 286 (1982) and references thereinGoogle Scholar
  67. 2.65
    D.L. Kwong, D.M. Kim: J. Appl. Phys. 54, 366 (1983)ADSCrossRefGoogle Scholar
  68. 2.66
    D. Agassi: J. Appl. Phys. 55, 4376 (1984)ADSCrossRefGoogle Scholar
  69. 2.67
    M.O. Thompson, G.J. Galvin, J.M. Mayer, P.S. Peercy, J.M. Poate, D.C. Jacobson, A.G. Cullis, N.G. Chew: Phys. Rev. Lett. 52, 2360 (1984)ADSCrossRefGoogle Scholar
  70. 2.68
    I.W. Boyd, T.F. Boggess, A.L. Smirl, S.C. Moss: Optica Acta 33, 527 (1986)ADSCrossRefGoogle Scholar
  71. 2.69
    I.W. Boyd, S.C. Moss, T.F. Boggess, A.L. Smirl: Appl. Phys. Lett. 45, 80 (1984) and references thereinADSCrossRefGoogle Scholar
  72. 2.70
    J.F. Ready: Industrial Applications of Lasers (Academic, New York 1978)Google Scholar
  73. 2.71
    See e.g. A.G. Cullis: Rep. Prog. Phys. 48, 1155 (1985) and references thereinGoogle Scholar
  74. 2.71
    A. G. Cullis, H.C. Webber, J.M. Poate, A.L. Simons: Appl. Phys. Lett. 36, 320 (1980)ADSCrossRefGoogle Scholar
  75. 2.72
    L. Eckertova: Physics of Thin Films (Plenum, London 1984)Google Scholar
  76. 2.73
    J.A. Venables: Philos. Mag. 27, 697 (1973)ADSCrossRefGoogle Scholar
  77. 2.74
    K. Takeuchi, K. Kinosita: Thin Solid Films 90, 31 (1982)ADSCrossRefGoogle Scholar
  78. 2.75
    G. Zinsmeister: Vacuum 16, 529 (1966)CrossRefGoogle Scholar
  79. 2.76
    D.J. Ehrlich, J.Y. Tsao: SPIE 4959, 2 (1984)Google Scholar
  80. 2.77
    R.B. Gold, J.F. Gibbons: J. Appl. Phys. 51, 1256 (1980)ADSCrossRefGoogle Scholar
  81. 2.78
    Z.L. Liau: Appl. Phys. Lett. 34, 221 (1979)ADSCrossRefGoogle Scholar
  82. 2.79
    R.B. Gold, J.F. Gibbons: In Laser and Electron Beam Processing of Materials, ed. by C.W. White, P.S. Peercy (Academic, New York 1980) p77Google Scholar
  83. 2.80
    A. Lietoila, R. Gold, J.F. Gibbons: Appl. Phys. Lett. 39, 810 (1981)ADSCrossRefGoogle Scholar
  84. 2.81
    H.H. Gilgen, C.J. Chen, R. Krchnavek, R.M. Osgood Jr: In Laser Processing and Diagnostics, ed. by D. Bäuerle, Springer Ser. Chem. Phys., Vol.39 (Springer, Berlin, Heidelberg 1984) p.225Google Scholar
  85. 2.82
    W.M. Donnelly, M. Greva, J. Long, R.F. Karlicek: Appl. Phys. Lett. 43, 454 (1983)CrossRefGoogle Scholar
  86. 2.83
    J. Zavelovich, M. Rothschild, W. Gornik, C.K. Rhodes: J. Chem. Phys. Soc. 74, 6787 (1981)ADSGoogle Scholar
  87. 2.84
    M. Zelikoff, K. Watanabe, E.C.Y. Inn: J. Chem. Phys. 21, 1643 (1953)ADSCrossRefGoogle Scholar
  88. 2.85
    American Institute of Physics Handbook, 2nd ed., ed. by D.E. Gray (AIP, New York 1972)Google Scholar
  89. 2.86
    Handbook of Optics, ed. by W.D. Driscol, W. Vaughan (McGraw-Hill, New York 1978)Google Scholar
  90. 2.87
    Pulsed Laser Processing of Semiconductors, ed. by R.F. Wood, C.W. White, R.T. Young (Academic, New York 1984)Google Scholar
  91. 2.88
    A.L. Smirl, T.F. Boggess, S.C. Moss, I.W. Boyd: J. Luminescence 30, 272 (1985)ADSCrossRefGoogle Scholar
  92. 2.89
    W.C. Dash, R. Newman: Phys. Rev. 99, 1151 (1955)ADSCrossRefGoogle Scholar
  93. 2.90
    H.Y. Fan, W.G. Spitzer, R.J. Collins: Phys. Rev. 101, 566 (1956)ADSCrossRefGoogle Scholar
  94. 2.91
    J.M. Poate, J.W. Mayer (eds.): Laser Annealing of Semiconductors (Academic, New York 1982)Google Scholar
  95. 2.92
    P.W. Baumeister: Phys. Rev. 121, 359 (1961)ADSCrossRefGoogle Scholar
  96. 2.93
    J.E. Eby, K.J. Teegarden, D.B. Dutton: Phys. Rev. 116, 1099 (1959)ADSCrossRefGoogle Scholar
  97. 2.94
    I.W. Boyd, J.I.B. Wilson: J. Appl. Phys. 53, 4166 (1982)ADSCrossRefGoogle Scholar
  98. 2.95
    I.W. Boyd: In Surface Studies with Lasers, ed. by F.R. Aussenegg, A. Leitner, M.E. Lippitsch, Springer Ser. Chem. Phys., Vol.33 (Springer, Berlin, Heidelberg 1983) p.193Google Scholar
  99. 2.96
    I.W. Boyd: In Dielectric Layers in Semiconductors, ed. by G.G. Bentini, E. Fogarassy, A. Golanski (Les Editions de Physique, Les Ulis 1986) p.177Google Scholar
  100. 2.97
    R.J. Elliott, A.F. Gibson: An Introduction to Solid State Physics and its Applications (MacMillan, London 1982)Google Scholar
  101. 2.98
    C. Kittel: Introduction to Solid State Physics (Wiley, London 1972)Google Scholar
  102. 2.99
    R.A. Smith: Semiconductors (Cambridge, London 1979)Google Scholar
  103. 2.100
    C.N. Banwell: Fundamentals of Molecular Spectroscopy (McGraw-Hill, London 1972)Google Scholar
  104. 2.101
    B.G. Streetman: Solid State Electronic Devices (Prentice Hall, London, 1980)Google Scholar
  105. 2.102
    J.I. Pankove: Optical Processes in Semiconductors (Dover, New York 1971)Google Scholar
  106. 2.103
    S.M. Sze: Physics of Semiconductor Devices (Wiley, New York 1981)Google Scholar
  107. 2.104
    M.C. Downer, R.L. Fork, C.V. Shank: J. Opt. Soc. Am. B 2, 595 (1985)ADSCrossRefGoogle Scholar
  108. 2.105
    J.M. Liu, R. Yen, H. Kurz, N. Bloembergen: Appl. Phys. Lett. 39, 755 (1981)ADSCrossRefGoogle Scholar
  109. 2.106
    P.H. Bucksbaum, J. Bokor: In Energy Beam-Solid Interactions and Transient Thermal Processing, ed. by J.C.C. Fan, N.H. Johnson (North-Holland, Amsterdam 1984) p.93Google Scholar

Recommendations for Further Reading

  1. Allmen, M.von: Laser-Beam Interactions with Materials, Springer Ser. Mat. Sci., Vol.2 (Springer, Berlin, Heidelberg 1987)Google Scholar
  2. D. Bäuerle: Chemical Processing with Lasers, Springer Ser. Mat. Sci., Vol.l (Springer, Berlin, Heidelberg 1986)Google Scholar
  3. Madelung, O.: Introduction to Solid-State Theory, Springer Ser. Solid-State Sci., Vol.2 (Springer, Berlin, Heidelberg 1978)CrossRefGoogle Scholar
  4. Seeger K.: Semiconductor Physics, 3rd. ed., Springer Ser. Solid-State Sci., Vol.40 (Springer, Berlin, Heidelberg 1985)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • Ian W. Boyd
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity College LondonLondonUK

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