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Summary and Conclusions

  • Ian W. Boyd
Chapter
  • 148 Downloads
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 3)

Abstract

Previous chapters have described in detail the various mechanisms by which thin dielectric films can be formed and patterned by laser beams. In this chapter, we discuss and compare the growth rates and physical properties of these layers. Since laser processing can also be extended to semiconducting, conducting, and superconducting films, we also discuss and assess the potential applications of the technology to specific device-oriented fields.

Keywords

Laser Processing Thermally Grown Oxide Breakdown Strength Direct Writing Grown Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 8.1
    B.M. McWilliams, I.P. Herman, F. Mitlitsky, R.A. Hyde, L.L. Woods Appl. Phys. Lett. 43, 946 (1983)ADSCrossRefGoogle Scholar
  2. 8.2
    B.M. McWilliams: (private communication, and to be published)Google Scholar
  3. 8.3
    G.G. Bentini, M. Berti, A.V. Drigo, E. Jannitti, C. Cohen, J. Siejka: In Laser Chemical Processing of Semiconductor Devices, ed. by F.A. Houle, T.F. Deutsch, R.M. Osgood (MRS, Pittsburgh 1984) p.126Google Scholar
  4. 8.4
    E. Harari: J. Appl. Phys. 49, 2478 (1978)ADSCrossRefGoogle Scholar
  5. 8.5
    C.M. Osburn, D.W. Ormond: J. Electrochem. Soc. 119, 591 (1972)CrossRefGoogle Scholar
  6. 8.6
    I.H. Pratt: Solid State Techn. 12, 49 (December 1969)Google Scholar
  7. 8.7
    I.W. Boyd: J. Appl. Phys. 54, 3561 (1983)ADSCrossRefGoogle Scholar
  8. 8.8
    R.R. Krchnavek, H.H. Gilgen, R.M. Osgood: J. Vac. Sci. Techn. B 2, 641 (1984)CrossRefGoogle Scholar
  9. 8.9
    T.E. Orlowski, H. Richter: Appl. Phys. Lett. 45, 241 (1984)ADSCrossRefGoogle Scholar
  10. 8.10
    K. Emery, L.R. Thompson, J.J. Rocca, G.J. Collins: SPIE 459, 82 (1984)Google Scholar
  11. 8.11
    J. Nulman, J.P. Krusius, A. Gat: IEEE EDL-6, 205 (1985)Google Scholar
  12. 8.12
    P.K. Boyer, G.A. Roche, W.H. Ritchie, G.J. Collins: Appl. Phys. Lett. 40, 716 (1982)ADSCrossRefGoogle Scholar
  13. 8.13
    P.K. Boyer, K.A. Emery, H. Zarnani, G. J. Collins: Appl. Phys. Lett. 45, 979 (1984)ADSCrossRefGoogle Scholar
  14. 8.14
    P.K. Boyer, C.A. Moore, R. Solanki, W.K. Ritchie, G.A. Roche, G.J. Collins: In Laser Diagnostics and Photochemical, Processing for Semiconductor Devices, ed. by R.M. Osgood, S.R.J. Brueck, H.R. Schlossberg (North-Holland, Amsterdam, 1983) p.119Google Scholar
  15. 8.15
    I.W. Boyd, J.I.B. Wilson: Solid State Electr. 27, 209 (1984)ADSCrossRefGoogle Scholar
  16. 8.16
    A.M. Hodge, C. Pickering, A.J. Pidduck, R.W. Hardeman: In Rapid Thermal Processing, ed. by T.O. Sedgwick, T.E. Seidel, B.-Y. Tsaur (Materials Research Society, Pittsburgh 1986) p.313Google Scholar
  17. 8.17
    C.M. Gronet, J.C. Sturm, K.E. Williams, J.F. Gibbons: In Rapid Thermal Processing, ed. by T.O. Sedgwick, T.E. Seidel, B.-Y. Tsaur (Materials Research Society, Pittsburgh 1986) p.305Google Scholar
  18. 8.18
    J.C. Gelpey, P.O. Stump, R.A. Capodilupo: In Rapid Thermal Processing, ed. by T.O. Sedgwick, T.E. Seidel, B.-Y. Tsaur (Materials Research Society, Pittsburgh 1986) p.321Google Scholar
  19. 8.19
    Z.A. Weinberg, T.N. Nguyen, S.A. Cohen, R. Kalish: In Rapid Thermal Processing, ed. by T.O. Sedgwick, T.E. Seidel, B.-Y. Tsaur (Materials Research Society, Pittsburgh 1986) p.327Google Scholar
  20. 8.20
    J. Nulman, J.P. Krusius, N. Shah, A. Gat, A. Baldwin: J. Vac. Sci. Technol. A 4, 1005 (1986)ADSCrossRefGoogle Scholar
  21. 8.21
    N. Chan Tung, Y. Caratini, L. Liauzu: In Dielectric Layers in Semiconductors, ed. by G.G. Bentini, E. Fogarassy, A. Golanski (Les Editions de Physique, Les Ulis 1986) p.247Google Scholar
  22. 8.22
    J.P. Ponpon, J.J. Grob, A. Grob, R. Stuck: J. Appl. Phys. 59, 3921 (1986)ADSCrossRefGoogle Scholar
  23. 8.23
    M.M. Moslehi, K.C. Saraswat, S.C. Shatas: Appl. Phys. Lett. 47, 1113 (1985)ADSCrossRefGoogle Scholar
  24. 8.24
    M.M. Moslehi, S.C. Shatas, K.C. Saraswat: Appl. Phys. Lett. 47, 1353 (1985)ADSCrossRefGoogle Scholar
  25. 8.25
    G.J. Fisanick, M.E. Gross, J.E. Hopkins, M.D. Fennell, K.J. Schnoes, A. Katzir: J. Appl. Phys. 57, 1139 (1985)ADSCrossRefGoogle Scholar
  26. 8.26
    M.E. Gross, A. Appelbaum, P.K. Gallagher: Appl. Phys. Lett. 61, 1628 (1987)Google Scholar
  27. 8.27
    J. Bohandy, B.F. Kim, F.J. Adrian: J. Appl. Phys. 60, 1538 (1986)ADSCrossRefGoogle Scholar
  28. 8.28
    H. Sankur, J.T. Cheung: J. Vac. Sci. Technol. A1, 1806 (1983)ADSGoogle Scholar
  29. 8.29
    D.J. Ehrlich, R.M. Osgood, D.J. Silversmith, T.F. Deutsch: IEEE EDL-1, 101 (1980)Google Scholar
  30. 8.30
    Y. Rytz-Froideveau, R.P. Salathè, H.H.Gilgen: Appl. Phys. A 37, 121 (1985)ADSCrossRefGoogle Scholar
  31. 8.31
    J.A. Yasaitis, G.H. Chapman, J.I. Raffel: IEEE EDL-3, 184 (1982)Google Scholar
  32. 8.32
    J.Y. Tsao, D.J. Ehrlich, D.J. Silversmith, R.W. Mountain: IEEE EDL-3, 164 (1982)Google Scholar
  33. 8.33
    J.G. Black, D.J. Ehrlich, M. Rothschild, S.P. Doran, J.H.C. Sedlacek: J. Vac. Sci. Technol. B 5, 419 (1987)CrossRefGoogle Scholar
  34. 8.34
    D.J. Ehrlich, J.Y. Tsao, D.J. Silversmith, J.H. Sedlacek, R.W. Mountain, W.S. Graber: IEEE EDL-3, 164 (1984)Google Scholar
  35. 8.35
    B.M. McWilliams, H.W. Chin, I.P. Herman, R.A. Hyde, F. Mitlitsky, J.C. Whitehead, L.L. Wood: SPIE 459, 49 (1984)Google Scholar
  36. 8.36
    H. Zarnani, P.K. Boyer, M. Fathipour, C.W. Wilmsen, R. Solanki, G.J. Collins: In Laser Chemical Processing of Semiconductor Devices, ed. by F.A. Houle, T.F. Deutsch, R.M. Osgood (MRS, Pittsburgh 1984) p.122Google Scholar
  37. 8.37
    B.E. Deal, A.S. Grove: J. Appl. Phys. 36, 3770 (1965)ADSCrossRefGoogle Scholar
  38. 8.38
    I.W. Boyd, J.I.B. Wilson: J. Appl. Phys. 53, 4166 (1982)ADSCrossRefGoogle Scholar
  39. 8.39
    I.W. Boyd, J.I.B. Wilson, J.L. West: Thin Solid Films 83, L173 (1981)ADSCrossRefGoogle Scholar
  40. 8.40
    S.A. Schafer, S.A. Lyon: J. Vac. Sci. Technol. 19, 494 (1981)ADSCrossRefGoogle Scholar
  41. 8.41
    C. Fiori: Phys. Rev. Lett. 52, 2077 (1984)ADSCrossRefGoogle Scholar
  42. 8.42
    Y. Mishima, M. Hirose, Y. Osaka, Y. Ashida: J. Appl. Phys. 55, 1234 (1984)ADSCrossRefGoogle Scholar
  43. 8.43
    A. Cros, R. Sal van, J. Derrien: Appl. Phys. A 28, 241 (1982)ADSCrossRefGoogle Scholar
  44. 8.44
    Y.S. Liu, S.W. Chiang, F. Bacon: Appl. Phys. Lett. 38, 1005 (1981)ADSCrossRefGoogle Scholar
  45. 8.45
    E. Fogarassy, C.W. White, D.H. Lowndes, J. Narayan: In Beam Solid Interactions and Phase Transformations, ed. by H. Kurz, G, L. Olson, J.M. Poate (MRS, Pittsburgh 1986) p. 173Google Scholar

Recommendation for Further Reading

  1. Allmen, M.von: Laser-Beam Interactions with Materials, Springer Ser. Mat. Sci., Vol.2 (Springer, Berlin, Heidelberg 1987)Google Scholar
  2. Aussenegg, F.R., A. Leitner, M. Lippitsch (eds.): Surface Studies with Lasers, Springer Ser. Chem. Phys., Vol.33 (Springer, Berlin, Heidelberg 1983)Google Scholar
  3. Bäuerle, D.: Chemical Processing with Lasers, Springer Ser. Mat. Sci., Vol.l (Springer, Berlin, Heidelberg 1986)Google Scholar
  4. Donnelly V.M., I.P. Herman, M. Hirose (eds.): Photon Beam and Plasma Stimulated Chemical Processes at Surfaces, MRS Symp. Proc. Vol.75 (MRS, Pittsburgh 1987)Google Scholar
  5. Gibbons, J.F.(ecL): CW Beam Processing of Silicon and Other Semiconductors, Vol.17 (Academic, New York 1984)Google Scholar
  6. Gutfeld R.J.von, J.E. Greene, H. Schlossberg (eds.); Beam Induced Chemical Processes, Extended Abstracts Symp.D, 1985 Fall Meeting Materials Research Society, Boston (MRS, Pittsburgh 1985)Google Scholar
  7. Howard R.E., E.L. Hu, S. Namba, S.W. Pang (eds.): Science and Technology of Microfabrication, MRS Symp Proc. Vol.76 (MRS, Pittsburgh 1987)Google Scholar
  8. Kurz H., G.L. Olson, J.M. Poate (eds.): Beam-Solid Interactions and Phase Transformations, MRS Symposia Proc. Vol.55 (MRS, Pittsburgh 1986)Google Scholar
  9. Le Lay G., J. Derrien, N. Boccara (eds.): Semiconductor Interfaces: Formation and Properties, Springer Proc. Phys., Vol.22 (Springer, Berlin, Heidelberg 1987)Google Scholar
  10. Nguyen V.T., D.J. Ehrlich: Emerging Technologies for In-Situ Processing (Nijhoff, Dordrecht 1987)Google Scholar
  11. Wood R.F., C.W. White, R.T. Young (eds.): Pulsed Laser Processing of Semiconductors, Semiconductors and Semimetals, Vol.23 (Academic, New York 1984)Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • Ian W. Boyd
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity College LondonLondonUK

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