Group-III Adatoms on Silicon Surfaces

  • Winfried Mönch
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 26)


On Si(111) surfaces, group-III atoms induce (√3 × √3)R30° reconstructions. Al, Ga, and In atoms have larger covalent radii than silicon and adsorb in T 4 sites. Each of the trivalent adatoms thus saturates the dangling bonds of three silicon surface atoms. Boron, on the other hand, has a much smaller covalent radius than silicon and, therefore, bonds between boron atoms occupying T 4 sites and nearest-neighbor silicon atoms would be strongly elongated. Substitutional S5 sites beneath silicon atoms in T 4 sites are energetically much more favorable configurations for the small boron atoms.


Boron Atom Covalent Radius Dangling Bond Large Binding Energy Unit Mesh 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für FestkörperphysikGerhard-Mercator-Universität DuisburgDuisburgGermany

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