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Group-III Adatoms on Silicon Surfaces

  • Winfried Mönch
Chapter
  • 190 Downloads
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 26)

Abstract

On Si(111) surfaces, group-III atoms induce (√3 × √3)R30° reconstructions. Al, Ga, and In atoms have larger covalent radii than silicon and adsorb in T 4 sites. Each of the trivalent adatoms thus saturates the dangling bonds of three silicon surface atoms. Boron, on the other hand, has a much smaller covalent radius than silicon and, therefore, bonds between boron atoms occupying T 4 sites and nearest-neighbor silicon atoms would be strongly elongated. Substitutional S5 sites beneath silicon atoms in T 4 sites are energetically much more favorable configurations for the small boron atoms.

Keywords

Boron Atom Covalent Radius Dangling Bond Large Binding Energy Unit Mesh 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für FestkörperphysikGerhard-Mercator-Universität DuisburgDuisburgGermany

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