Cleaved {110} Surfaces of III–V and II–VI Compound Semiconductors

  • Winfried Mönch
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 26)


Compound semiconductors, which crystallize in the cubic zincblende structure, cleave along {110} planes. Such planes contain the same number of anions and cations per unit area and are thus intrinsically neutral. With {110} surfaces of compound semiconductors no reconstructions are observed but the surface atoms relax from the positions expected for a bulklike termination such that the cation-anion zigzag chains become tilted with the anions being raised. As a result of this relaxation, the total valence charge remains the same around surface and bulk atoms. The dangling-bond surface states are lower in energy at the surface anions than at the surface cations. The band-structure term of the total energy is thus lowered with respect to a bulklike termination when the dangling bonds are completely occupied at the anions but empty at the cations. The surface relaxation indeed shifts the cation dangling-bond band to above the conduction-band minimum. The lowering of the band-structure energy obviously overcompensates the strain energy correlated with the tilting of the cation-anion chains.


Surface Atom Compound Semiconductor Surface Phonon Incident Laser Light Energy Distribution Curve 
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  1. 1.
    This experimental technique has been reviewed by von der Veen [1985].Google Scholar
  2. 2.
    The dynamical theories of LEED have been described in detail by Penary [1974], Duke [1974], van Hove and Tong [1979], and van Hove et al. [1986].Google Scholar
  3. 3.
    Respective data have been compiled by, for example, Greenwood and Earnshaw [1984].Google Scholar
  4. 4.
    For a detailed treatment of Fuchs-Kliewer phonons the reader is referred to a review article by Ibach [1971] and a monograph by Ibach and Mills [1982].Google Scholar
  5. 5.
    See textbooks on solid state physics as, for example, the one by Ibach and Lü th [1991].Google Scholar
  6. 6.
    For a detailed treatment of Rayleigh waves the reader is referred to a monograph by Ibach and Mills [1982].Google Scholar
  7. 7.
    Results published up to 1987 have been critically reviewed by Hansson and Uhrberg [1988].Google Scholar
  8. 8.
    Results obtained until 1989 have been critically reviewed by Himpsel [1990].Google Scholar
  9. 9.
    An introduction into the technique and theory of STM may be found in the three volumes edited by Gü ntherodt and Wiesendanger [1992/1993].Google Scholar
  10. 10.
    STM images, which demonstrated atomic resolution on close-packed metal surfaces, were first reported by Wintterlin et al. [1989] for Al(111) surfaces.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1995

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für FestkörperphysikGerhard-Mercator-Universität DuisburgDuisburgGermany

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