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Results and Case Studies

  • Fabrizio Bonani
  • Giovanni Ghione
Chapter
  • 481 Downloads
Part of the Springer Series in ADVANCED MICROELECTRONICS book series (MICROELECTR., volume 7)

Abstract

The purpose of this chapter is to present a few results and case studies on the physics-based numerical simulation of noise in small-signal conditions for some selected classes of devices: resistors, pn diodes, field-effect and bipolar transistors. As a general remark, numerical noise modeling yields results which are in agreement with analytical approaches in all simple cases, but also enables us to cast light on more complex behaviors. Examples of the latter instance are the noise modeling of intrinsic or weakly doped short semiconductor samples, whose noise properties can significantly deviate from the Nyquist law already at comparatively low field, and the excess noise due to GR effects, whose frequency behavior in short samples is not strictly Lorentzian, with cutoff angular frequency simply equal to the inverse of the minority-carrier lifetime. Finally, numerical noise modeling can handle situations wherein analytical methods fail to provide a simple answer, as in bipolar devices under high-injection conditions, or in short-channel FETs.

Keywords

Minority Carrier Excess Noise Noise Density Bias Dependence Impedance Field 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2001

Authors and Affiliations

  • Fabrizio Bonani
    • 1
  • Giovanni Ghione
    • 1
  1. 1.Dipartimento di ElettronicaPolitecnico di TorinoTorinoItaly

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