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Chapter 1 introduces the background and the main goals of the work. Ensuring commercial success of semiconductor industry requires continuous scaling and proceeding functional integration of CMOS. The classical approach of constant-field scaling and it’s corresponding limitations are shown. Based on that different scaling options beyond the constant-field approach suitable for near-, mid- and long term requirements are outlined, including novel materials, device architectures and device concepts. The main focus is on high-k dielectrics, multi-gate transistors and tunneling devices. Since the assessment of analog and mixed-signal capabilities is based on variations Chap. 1 classifies the most important variation effects on device level and gives the relation to analog and mixed-signal circuit performance.
KeywordsGate Length Double Gate Drain Induce Barrier Lowering Signal Transfer Function Power Supply Rejection Ratio
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