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Analog Properties of Multi-Gate MOSFETs

  • Michael FuldeEmail author
Chapter
  • 963 Downloads
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 28)

Abstract

State-of-the-art high-k multi-gate CMOS technology is introduced in Chap. 2 with special focus on analog device behavior and variability. The specific impact of high-k dielectrics is also covered. The objective is to close the link from technology and integration aspects to analog device performance. The associated trade-offs are outlined. On device level, the reduction of short channel effects is a major advantage of fully depleted multi-gate devices, resulting in beneficial output impedance, gain and matching behavior. Serious concerns related to high-k dielectrics are pronounced flicker noise and dynamic threshold voltage variations or hysteresis effects. A novel model of this new hysteresis effects suitable for analog circuit simulation is derived and verified with measurements.

Keywords

Gate Length Short Channel Effect Gate Pulse Match Behavior Intrinsic Gain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V. 2010

Authors and Affiliations

  1. 1.Infineon Technologies Austria AGVillachAustria

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